PLASMA REACTOR WITH ELECTRODE ARRANGEMENT FOR PROVIDING A GROUNDING PATH FOR THE PLASMA, AND METHOD OF MANUFACTURING THE SAME

摘要

Plasma processing tools, dual source plasma etchers, and etching methods are described. In one embodiments, a processing chamber (206) is provided having an interior base and an interior sidewall (246) joined with the base. A generally planar inductive source (306) is mounted proximate the chamber. A dielectric liner (326) is disposed within the chamber over the interior sidewall with the liner being received over less than an entirety of the interior sidewall. In a preferred embodiment, the interior sidewall has a groundable portion and the dielectric liner has a passageway (346) positioned to expose the groundable interior sidewall portion. Subsequently, a plasma developed within the chamber is disposed along a grounding path which extends to the exposed interior sidewall. In another preferred embodiment, the dielectric liner is removably mounted within the processing chamber.