| 摘要 |
<p>A microelectronic structure including adjacent material layers (14 and 16) susceptible of adverse interaction in contact with one another, and a barrier layer (12) interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or higher order metal nitride-carbide material, whose metal constituents are different from one another and include at least one metal selected from the group consisting of transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Sc and Y, and optimally further including Al and/or Si.</p> |
