Photodetector array, especially a photodiode array, is produced by forming a common electrode on the radiation incident back face to avoid radiation shadowing by front face wiring of individual electrodes

摘要

Photodetector array production, comprises forming a common electrode on the radiation incident back face so radiation is not obscured by front face wiring of individual electrodes. Photodetector array production comprises: (a) preparing a substrate (1) comprising a common electrode-forming conductive layer, a photosensitive layer (2) and individual electrode-forming conductive regions (4); (b) carrying out electrical contacting and wiring of the conductive regions (4); (c) applying the front face of the substrate (1) onto a carrier substrate (20); and (d) back face thinning the substrate (1) to allow radiation transmission from the back face to the photosensitive layer. An Independent claim is also included for a photodetector array produced by the above process. Preferred Features: The carrier substrate (20) consists of a semiconductor processing-compatible material, especially single crystal silicon, polysilicon, quartz or glass.