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发明名称
Dual damascene structure
摘要
A method for manufacturing a dual damascene structure includes the use of a sacrificial stud and provides an improved defined edge on the interface between the conductive line openings and the via openings.
申请公布号
US6033977(A)
申请公布日期
2000.03.07
申请号
US19970884729
申请日期
1997.06.30
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
GUTSCHE, MARTIN;TOBBEN, DIRK
分类号
H01L21/28;H01L21/768;(IPC1-7):H01L21/476
主分类号
H01L21/28
代理机构
代理人
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