发明名称 |
Process of selectively producing refractory metal silicide uniform in thickness regardless of conductivity type of silicon thereunder |
摘要 |
Amorphous silicon layers are formed on an n-type single-crystal/poly-crystal layer and a p-type single-crystal/poly-crystal layer, and titanium is sputtered on the amorphous silicon layers; although the n-type dopant impurity are piled on the n-type single-crystal/poly-crystal layers, the amorphous silicon layers takes the piles of n-type dopant impurity thereinto, and promote the silicidation of the titanium layer.
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申请公布号 |
US6033978(A) |
申请公布日期 |
2000.03.07 |
申请号 |
US19960754519 |
申请日期 |
1996.11.21 |
申请人 |
NEC CORPORATION |
发明人 |
FUJII, KUNIHIRO;WATANABE, HIROHITO |
分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L21/8238;(IPC1-7):H01L21/476;H01L21/44;H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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