| 发明名称 |
Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
| 摘要 |
Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.
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| 申请公布号 |
US6033996(A) |
申请公布日期 |
2000.03.07 |
| 申请号 |
US19970969595 |
申请日期 |
1997.11.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RATH, DAVID L.;JAGANNATHAN, RANGARAJAN;MCCULLOUGH, KENNETH J.;OKORN-SCHMIDT, HARALD F.;MADDEN, KAREN P.;POPE, KEITH R. |
| 分类号 |
H01L21/02;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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