Method for making multiple wavelength semiconductor lasers on a single wafer

摘要

A plurality of different wavelength semiconductor lasers are fabricated on a single semiconductor substrate by establishing a thermal gradient across the substrate during epitaxial growth. The result is a variation in composition which produces a corresponding variation of laser wavelength across the substrate. The thermal gradient is preferably achieved by disposing a patterned layer of material (heat reflecting or heat absorbing) on the back side of the substrate, radiatively heating the backside and growing the active layers on the front side. The backside layer is removed when the substrate is lapped to final thickness.