| 摘要 |
<p>A method for use in the fabrication of integrated circuits includes providing a substrate assembly (11) having a surface (12). A diffusion barrier layer (13) is formed over at least a portion of the surface (12). The diffusion barrier layer (13) is formed of RuSix, where x is in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSix by chemical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium relative to a silicon containing region and performing an anneal to form RuSix from the layer of ruthenium and the silicon containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer.</p> |
