发明名称 |
Plating apparatus for plating a wafer |
摘要 |
The present invention provides for a plating apparatus and a method of plating, which improve the uniformity of a plated coating thickness without changing the flow velocity of a feed plating solution. An aperture can be provided at a center of a meshed anode electrode of the plating apparatus to obtain an electric field density distribution between the meshed anode electrode and a wafer that is lower in the central portion of the wafer than in the edge portion of the wafer.
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申请公布号 |
US6033540(A) |
申请公布日期 |
2000.03.07 |
申请号 |
US19970972969 |
申请日期 |
1997.11.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOSAKI, KATSUYA;TAMAKI, MASAHIRO |
分类号 |
C25D5/08;C25D7/12;C25D17/00;C25D17/12;H01L21/288;(IPC1-7):C25B11/00 |
主分类号 |
C25D5/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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