发明名称 Plating apparatus for plating a wafer
摘要 The present invention provides for a plating apparatus and a method of plating, which improve the uniformity of a plated coating thickness without changing the flow velocity of a feed plating solution. An aperture can be provided at a center of a meshed anode electrode of the plating apparatus to obtain an electric field density distribution between the meshed anode electrode and a wafer that is lower in the central portion of the wafer than in the edge portion of the wafer.
申请公布号 US6033540(A) 申请公布日期 2000.03.07
申请号 US19970972969 申请日期 1997.11.19
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KOSAKI, KATSUYA;TAMAKI, MASAHIRO
分类号 C25D5/08;C25D7/12;C25D17/00;C25D17/12;H01L21/288;(IPC1-7):C25B11/00 主分类号 C25D5/08
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