发明名称 Method and apparatus for plasma processing apparatus
摘要 An electromagnetically coupled plasma processing apparatus is arranged so that a microwave sent through a coaxial waveguide is enlarged by a parallel disk waveguide before being radiated from an enlarged coaxial portion. The electromagnetically coupled plasma processing apparatus has a loop antenna for passing a high-frequency wave, a cavity resonator for surrounding the loop antenna, and a slit in double-layer structure in a position where the cavity resonator faces a plasma. The plasma on the surface of a wafer can be processed uniformly with various desirable effects including: (1) preventing foreign matter from being produced and abnormal discharge because of electrostatic coupling; (2) improving the ignitability and stability of a plasma; (3) lowering the antenna voltage; and (4) effecting uniform processing by providing an opposed grounding electrode.
申请公布号 US6034346(A) 申请公布日期 2000.03.07
申请号 US19960649190 申请日期 1996.05.17
申请人 HITACHI, LTD. 发明人 YOSHIOKA, KEN;KANAI, SABUROU;KAJI, TETSUNORI;NISHIO, RYOJI;EDAMURA, MANABU
分类号 H01J37/32;(IPC1-7):B23K10/00 主分类号 H01J37/32
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