发明名称 |
Method and apparatus for plasma processing apparatus |
摘要 |
An electromagnetically coupled plasma processing apparatus is arranged so that a microwave sent through a coaxial waveguide is enlarged by a parallel disk waveguide before being radiated from an enlarged coaxial portion. The electromagnetically coupled plasma processing apparatus has a loop antenna for passing a high-frequency wave, a cavity resonator for surrounding the loop antenna, and a slit in double-layer structure in a position where the cavity resonator faces a plasma. The plasma on the surface of a wafer can be processed uniformly with various desirable effects including: (1) preventing foreign matter from being produced and abnormal discharge because of electrostatic coupling; (2) improving the ignitability and stability of a plasma; (3) lowering the antenna voltage; and (4) effecting uniform processing by providing an opposed grounding electrode.
|
申请公布号 |
US6034346(A) |
申请公布日期 |
2000.03.07 |
申请号 |
US19960649190 |
申请日期 |
1996.05.17 |
申请人 |
HITACHI, LTD. |
发明人 |
YOSHIOKA, KEN;KANAI, SABUROU;KAJI, TETSUNORI;NISHIO, RYOJI;EDAMURA, MANABU |
分类号 |
H01J37/32;(IPC1-7):B23K10/00 |
主分类号 |
H01J37/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|