Method for producing a heat spreader and semiconductor device with a heat spreader

摘要

A heat spreader for a semiconductor device is constituted by an integral laminate of alternatingly stacked and diffusion-bonded Fe-Ni alloy sheets and copper-group metal sheets, the laminate having a one-directional stripe pattern of the Fe-Ni alloy sheets and the copper-group metal sheets, which appears on a planar surface on which a silicon chip is disposed. It is produced by (a) alternatingly stacking Fe-Ni alloy sheets and copper-group metal sheets, (b) hot isostatic-pressing the resulting stack of the metal sheets to form a slab, (c) rolling the slab vertically to the laminating direction of the metal sheets to form an integrated stripe-pattern laminate, and (d) cutting the integrated stripe-pattern laminate to a predetermined shape.