Growing method of GaAs quantum dots using chemical beam epitaxy

摘要

The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.