| 摘要 |
After a TiN film is formed on an Si substrate by sputtering, CVD or the like, an optical constant such as a refractive index of the TiN film is measured. If the refractive index relative to light having a wavelength of 700 nm is 2.0 or smaller, it is judged that a nitridation degree of the TiN film is sufficiently high (near to a composition ratio Ti/N=1). A W film formed on the TiN film judged as above has good adhesion relative to the TiN film. This W film forming method may be applied to forming a wiring with a W plug.
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