发明名称 PLASMA CVD DEVICE AND PRODUCTION OF THIN FILM ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To make a plasma generating electrode and an electrode on the side of a substrate electrically independent, to attain the generation of plasma, ion control and the prevention of deterioration in film quality and to obtain uniform plasma of large area by arranging conducting rods feeding high frequency electric power and grouded conducting rods alternately in a laddery state in such a manner that they are insulated with each other. SOLUTION: In a vacuum vessel 1 a ladder-type electrode 4 and a substrate holder 6 to be mounted with a substrate 5 are placed by being away and opposite to each other, the ladder-type electrode 4 is a plasma generating electrode and is connected to a high frequency power source 8 via a matching circuit 7 for impedance matching. When the conducting rod on the high pressure side of the ladder-type electrode 4 is applied with high frequency electric power, plasma is generated on the space between it and the conducting rod on the grounded side along the electrode side, the electric potential on the substrate side does not directly exert influence and to the ladder-type electrode 4 the substrate 5 and the substrate holder 6 are made electrically independent. In this way, the distribution of the electron density is made continuously uniform, the degree of freedom in the film forming process increases to improve the controllability of the film formation.
申请公布号 JP2000073174(A) 申请公布日期 2000.03.07
申请号 JP19980239661 申请日期 1998.08.26
申请人 MITSUBISHI HEAVY IND LTD 发明人 SATAKE KOJI;SHIGENAKA TOSHIAKI;YAMAKOSHI HIDEO
分类号 C23C16/50;C23C16/455;C23C16/509;H01L21/205;H01L21/31;(IPC1-7):C23C16/509 主分类号 C23C16/50
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