| 发明名称 |
Reduction of black silicon in semiconductor fabrication |
| 摘要 |
Reduction of black silicon is achieved by providing a dielectric layer in at least the bead region of the wafer before the formation of a hard etch mask.
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| 申请公布号 |
US6033997(A) |
申请公布日期 |
2000.03.07 |
| 申请号 |
US19970998858 |
申请日期 |
1997.12.29 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
PERNG, DUNG-CHING |
| 分类号 |
H01L21/302;H01L21/033;H01L21/3065;H01L21/308;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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