METHOD OF FORMING METAL SILICIDE LAYER SELECTIVELY

摘要

PURPOSE: A method of forming metal silicide layer selectively is provided to prevent a leakage current or a deterioration of electrostatic discharge isolation property due to a metal silicide layer formed in undesired position. CONSTITUTION: The method is comprising the steps of forming an interlayer insulating layer on desired position of a lower structure composed of silicon, patterning the interlayer insulating layer for exposing region where want to form the metal silicide layer, depositing a metal layer on the overall resultant, forming the metal silicide layer only on the region where the interlayer insulating layer is removed by heat-treating the resultant. The metal is composed of a titanium or a cobalt.