发明名称 |
HIGH VOLTAGE GENERATING CIRCUIT |
摘要 |
PURPOSE: A high voltage generating circuit is provided to boost a voltage to a desired high level by improving a pumping efficiency. CONSTITUTION: The high voltage generating circuit comprises: an oscillating circuit for generating a pulse signal; an input circuit for generating a pair of signals having a complementary level after receiving the pulse signals from the oscillating circuit; a driving circuit for amplifying output signals from the input circuit; a pump circuit further comprising a plurality of capacitors having a first and a second electrodes in which the first electrode receives the amplified output signals from the driving circuit; a transfer circuit for transferring a high voltage to a voltage pumping node of which a bulk is connected to the driving circuit and to the second electrodes of a plurality of capacitors of the voltage pumping circuit; and a bias circuit for initializing the voltage pumping node to a power-up state by the same voltage as a power voltage.
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申请公布号 |
KR20000013309(A) |
申请公布日期 |
2000.03.06 |
申请号 |
KR19980032087 |
申请日期 |
1998.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JUN |
分类号 |
G11C11/413;(IPC1-7):G11C11/413 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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