发明名称 |
ISOLATION METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An isolation method is provided to guarantee an active region by minimizing a length of a bird's beak and decrease a threshold voltage. CONSTITUTION: The isolation method comprises the steps of: forming an opening for making an isolation in a predetermined region of a material layer functioning as a mask layer evaporated on a semiconductor device; growing an epitaxial layer in the inside of the opening; and forming an isolation layer by oxidizing the semiconductor substrate on which the epitaxial layer is grown.
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申请公布号 |
KR20000012965(A) |
申请公布日期 |
2000.03.06 |
申请号 |
KR19980031566 |
申请日期 |
1998.08.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG, HEUNG MO |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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