发明名称 ISOLATION METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: An isolation method is provided to guarantee an active region by minimizing a length of a bird's beak and decrease a threshold voltage. CONSTITUTION: The isolation method comprises the steps of: forming an opening for making an isolation in a predetermined region of a material layer functioning as a mask layer evaporated on a semiconductor device; growing an epitaxial layer in the inside of the opening; and forming an isolation layer by oxidizing the semiconductor substrate on which the epitaxial layer is grown.
申请公布号 KR20000012965(A) 申请公布日期 2000.03.06
申请号 KR19980031566 申请日期 1998.08.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, HEUNG MO
分类号 H01L21/76;(IPC1-7):H01L21/76 主分类号 H01L21/76
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