METAL WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: Insulating substance with a constant mutation is lead in to solve the problem that the increase of a parasitic capacitance and resistance of metal wiring widens and a gap of metal wiring decrease. And to solve the problem of contact errors or etc., when a profile forms multiple wiring structure on the metal pattern due to difference of the applied thickness of metal substance and when the use of a low dielectric film as an insulating substance of metal patterns of various dimension. CONSTITUTION: After stacking the metal wiring layer(110) on a substrate(100) insulating layer for blocking etching(120) is stacked, the insulating layer for blocking etching (120) and the metal wiring layer(110) are patterned. A low dielectric film(130a) is stacked between the metal patterns and flatting process is performed to the front surface of the insulating film for blocking etching (120) using CMP(Chemical Mechanical Polishing). Thus contact errors caused by profile difference of the low dielectric film is avoided in manufacturing semiconductor device forming metal patterns with various dimension on a plane.