PAD AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A manufacturing method of pad is provided to prevent a decrease of a threshold voltage of a transistor in a semiconductor substrate. CONSTITUTION: The pad manufacturing method comprises the steps of: forming a conductive pattern of which an upper surface and both sides are surrounded by a first insulation layer in the semiconductor substrate; forming a second insulation layer having an etching rate with the first insulation layer on the substrate including the conductive pattern; forming an opening exposing an upper surface of the substrate between the conductive patterns by selectively etching the second insulation layer; forming a prevention layer on the sidewalls of the opening for preventing a material diffusion from the second insulation layer to the lower part of the opening; and forming a pad electrically connected to the semiconductor substrate by filling up the opening with the second conductive layer.