发明名称 |
PRODUCTION PROCESS OF THIN FILM USING ATOMIC LAYER DEPOSITION |
摘要 |
PURPOSE: The atomic layer deposition(ALD) is provided which shows high film density and excellent stoichiometry. CONSTITUTION: The production process of a thin film using ALD comprises the following steps of:(1) Adsorbing chemically a first reactant into a base plate by injecting the first reactant with keeping a chamber loaded at a uniform pressure and temperature; (2) Pumping or purging the chamber to eliminate the first physically-adsorbed reactant from the first chemically-adsorbed reactant; (3) Injecting the first reactant into the chamber again for close packed adsorption; (4) Repeating the second step; (5) Injecting the second reactant to adsorb it on the surface of the base plate; (6) Pumping or purging the chamber to eliminate the second physically-adsorbed reactant from the first and the second chemically-adsorbed reactant formed densely; and (7) Injecting the second reactant into the chamber and adsorbing it densely on the base plate to produce a solid thin film through chemical substitution.
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申请公布号 |
KR20000013329(A) |
申请公布日期 |
2000.03.06 |
申请号 |
KR19980032139 |
申请日期 |
1998.08.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YEONG KWAN;LEE, SANG IN;PARK, CHANG SOO;LEE, SANG MIN |
分类号 |
C23C16/44;C23C16/455;H01L21/205;H01L21/314;H01L21/316;H05B33/04;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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