| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a photovoltaic element having a high reverse bias resistance whereby the optical deterioration due to the interface level is reduced and peel between semiconductor layers can be prevented. SOLUTION: A method of forming a photovoltaic element having one or more pin structured units repeatedly disposed on a substrate 190 is provided. Each unit is composed of an n-, i- and p-type semiconductor layers 103-105 laminated one above another. Each semiconductor layer has a non-single crystal structure and contains Si atoms. At least one of the surfaces of these semiconductor layers contains a B atom-containing gas 1-1000ppm. It is annealed in a H gas, He gas or Ar gas atmosphere contg. an O atom-containing gas 1-1000ppm. It is preferable that the annealing temp. is 50-400 deg.C, the annealing pressure is 0.01-10Torr and the frequency of a microwave used for the microwave plasma CVD method is 0.1-10GHz. |
