| 摘要 |
PURPOSE:To provide a photovoltaic element forming method by which a high- performance photovoltaic element can be formed by using such a hydrogen plasma treatment method that impurities adsorbed to or contained in the internal wall surface of a chamber can be prevented substantially and, at the same time, stable discharging can be obtained. CONSTITUTION:In a photovoltaic element forming method in which at least one or more pin structures formed by successively piling up a non-single crystal n-type layer containing silicon atoms, non-single crystal i-type n/i buffer layer, non-single crystal i-type layer, non-single crystal i-type p/i buffer layer, and non-single crystal. p-type layer upon another are piled up on a substrate, the vicinity of the interface between the p/i buffer layer and p-type layer is subjected to plasma treatment performed by using a hydrogen gas mixed with a gas containing silicon atoms in such a degree that the atoms do not accumulate substantially and another gas containing a group III element on the periodic table. |
