TiN NITRITE FILM FORMING METHOD

摘要

PURPOSE: A TiN film is provided which prevents diffusion excellently. CONSTITUTION: A TiN film with a columnar structural crystal grain is formed through the CVD method. And a TiN film with a crossing isotropic crystal grain is formed on the TiN additionally. Then a condition gas is provided, which is the same gas as is provided in the formation of the first TiN film, in different quantity from that of the first. Consequentially, a void (C) which is a diffusion path is not linked and the diffusion quality of the TiN film is improved because of an interface (I) between the two TiN films.