| 摘要 |
PURPOSE: During the manufacturing process of a semiconductor, a contact hole or a trench tends to be formed with multi layers according to the current high integration and a leveling is operated in the parallel with the formation of multi layers in the contact hole. But the slurries generated during the leveling procedure remain within the contact hole and obstruct the leveling of an upper layer. CONSTITUTION: The pattern of a contact hole is formed on a dielectric layer (22) like a IMD (inter metal dielectric) and a metal layer (24) like tungsten is formed on the dielectric layer with the formed pattern and in the contact hole. After a PR (photoresist)(26) is charged in the contact hole where the metal layer (24) is formed, the metal layer (24) is leveled through the methods like CMP. Then a upper layer is formed after the remove of the photoresist (26). Because the slurries are also removed during the removing process of the photoresist (26), the leveling is not obstructed.
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