| 摘要 |
PURPOSE: An LDD area or an off-set area is formed by the heat treatment of a photosensitive pattern for the formation of a gate electrode and the use of the re-flowed photosensitive pattern as a mask and the doping of impurities with a high density on both sides of an activating layer. Consequentially, only one mask procedure is necessary and a miss alignment is prevented. Also the thin film transistor manufacturing process becomes simple and the manufacturing cost is reduced. CONSTITUTION: A buffer layer (12), an activating layer (13) and a gate dielectric layer(14) are formed on a substrate (11) successively. After an electric conducting layer (15) is formed in the whole area of the gate dielectric layer (14) and a photosensitive film is painted on the electric conducting layer (15), the photosensitive film is patterned. The patterned photosensitive film (PR) used as an etching mask etches the electric conducting layer (15) and a gate electrode (15a) is formed. After the patterned photosensitive film (PR) is heated and re-flowed, impurities of a high density is doped, with the re-flowed photosensitive film (RPR) used as the mask, in the activating layer (13), and a drain and source area (13a) is formed. After that, the re-flowed photosensitive film (RPR) is removed. Consequentially, a channel area (I) is formed in the activating layer (13) of the lower gate electrode (15a) and an off-set area (II) is formed between the drain (13b) and the source area(13b) and the channel area(I).
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