发明名称 |
CONTROL SIGNAL GENERATING CIRCUIT IN A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A control signal generating circuit is provided to stably generate a word line control signal and a sense amplifier enable signal for use in a high speed operation. CONSTITUTION: The control signal generating circuit comprises: a block decoder for generating a block control signal in response to an address buffer signal and a control signal; a section word line driver for generating a section word line control signal in response to a main word line control signal and the block control signal; a word line control element for generating the word line control signal and the sense amplifier enable signal in response to a read enable signal and the block control signal while the signals are delayed for a predetermined time but a width of the signals is maintained in a reading operation; and a control signal generating element for generating the control signal in response to the block control signal in a writing operation while in response to the word line control signal and the block control signal in a reading operation.
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申请公布号 |
KR20000013945(A) |
申请公布日期 |
2000.03.06 |
申请号 |
KR19980033088 |
申请日期 |
1998.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JIN HO |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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