| 摘要 |
PURPOSE: A capacity type acceleration sensor is provided to simplify a process and improve productivity using a structure of pressure resist type acceleration sensor and principle of detection for acceleration sensor. CONSTITUTION: The capacity type acceleration sensor a silicon wafer, a mass,a insulating layer, a lower electrode, a cap layer, and a upper electrode. In the capacity type acceleration sensor, the mass is formed on the silicon wafer and flowed by an external force. The insulating layer is deposed on upside of silicon wafer and mass. The wire is deposed on upside of silicon wafer and the wire is connected to an internal circuit. The lower electrode has the wire. The cap layer forms space, wherein the space is placed on upside of the silicon wafer with the insulating layer. The upper electrode has a wire which is formed a down surface of the cap layer and connected to the internal circuit. |
