| 摘要 |
PURPOSE: A method of forming gate is provided to insure an operation and process reliability by preventing an over etching of a tungsten silicide. CONSTITUTION: The method of forming gate having double layer structure including a tungsten silicide and a poly silicon, is comprising the steps of a tungsten silicide plasma etching step removing the exposed tungsten silicide layer by supplying an etching gas in a plasma shape after forming a photo-resist(PR) on the tungsten silicide layer, a removing step for removing the remained etching gas out of the chamber, a poly silicon removing step for removing the exposed poly silicon layer by supplying a poly silicon etching gas and by using a PR formed on the tungsten silicide layer as mask, and exhausting step for exhausting byproducts and remained gas out of the chamber.
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