CAPACITOR OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME

摘要

PURPOSE: A capacitor of semiconductor device and fabricating method of the same is provided to prevent a leakage current caused by an oxygen vacancy by using a high ferro-electric having a ferro-electric property and a stability. CONSTITUTION: The capacitor including a lower electrode formed on a semiconductor substrate and a dielectric layer formed on the lower electrode. The dielectric layer is a ferro-electric layer and is formed of a tantalum nitride oxide having a thickness from 10 angstrom to 500 angstrom. For the deposition of the tantalum nitride oxide, a chemical vapor deposition(CVD) method is applied. In the CVD method, a tantalum ethoxide gas is used as a source of a tantalum and an oxygen and an ammonia gas is used as a source of a nitrogen.