DUAL PORT RANDOM ACCESS MEMORY IN A SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A dual port RAM(Random Access Memory) is provided to prevent an interference effect, improve an operating speed and reduce a power consumption. CONSTITUTION: A bit cell of the dual port RAM comprises: first and second word lines; a first and a second groups of bit lines; and a latch circuit which includes first and second inverters connected in a manner that input and output terminals of the latch circuit are transposed. The first inverter includes a first PMOS(P-type Metal Oxide Semiconductor) transistor connected to a power supply and a first and a second NMOS(N-type Metal Oxide Semiconductor) transistors coupled in parallel between the first PMOS transistor and a ground voltage while the second inverter includes a second PMOS transistor connected to a power supply and a third and a fourth NMOS transistors coupled in parallel between the second PMOS transistor and a ground voltage. The first, second, third and fourth NMOS transistors of the first and the second inverters are disposed in a way the groups of bit lines are arranged in groups.