METHOD OF MANUFACTURING CHARGE COUPLED DEVICE

摘要

PURPOSE: As gates in CCD(Charge Coupled Device) are superposed, step portion is generated. The generation of step portion is to be prevented. CONSTITUTION: The first and third gate(47)(48) are formed by intervening the second gate insulating film in the exposed area of HCCD(Horizontal Charge Coupled Device, 35). The second gate insulating film(45) and the first and third gate (47)(48) form insulating materials such as silicon oxide or ONO in appropriate thickness on HCCD(35) and the second and fourth gate (39)(40). Doped polycrystal silicon layer is evaporated, before the second gate insulating film(45) and the first and third gate(47)(48) are formed by chemical-mechanical polishing or reactive ion etching to expose the surfaces of the second and fourth gate(39)(40). Consequentially the first and third gate(47)(48) and the second and fourth gate(39)(40) are superposed without step portion.