| 摘要 |
PURPOSE: A critical dimension target is provided to measure a critical dimension of a pattern formed during a semiconductor fabricating process utilizing an overlay apparatus. CONSTITUTION: The critical dimension target comprises an inner target and an outer target. A central line(C1) of both inner lines(L2, L7) of the outer target is identical to a central line(C2) of one side inner line(L4) and the other side outer line(L6) of the inner target. If overlay values(O(C1), O(C2)) of the central lines(C1, C2) are calculated, a pattern size of a present step is identical to that of a target step.
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