MANUFACTURING METHOD OF STATIC RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A manufacturing method of SRAM(Static Random Access Memory) device is provided to reduce a step difference and simplify a manufacturing process by making a plurality of overlapped contact holes at a time. CONSTITUTION: The manufacturing method comprises the steps of: forming a gate insulation layer on a semiconductor substrate in which an active region is defined; forming a gate after evaporating and patterning a first conduction layer; sequentially evaporating a first insulation layer and a second conduction layer on the gate insulation layer; forming a gate of a thin film transistor by patterning the second conduction layer; forming a second insulation layer which is used as a gate insulation layer of the thin film transistor on the second conduction layer including the gate of a thin film transistor; forming a contact hole exposing the second, first conduction layers and active region by etching the second and first insulation layer; and forming a channel of the thin film transistor by evaporating and patterning a third conduction layer on the second insulation layer including the contact hole.