MANUFACTURING METHOD OF CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a capacitor is provided to prevent degradation of a logic transistor or a silicide layer by using a low temperature process. CONSTITUTION: The manufacturing method of a capacitor comprises the steps of: forming a gate electrode on the semiconductor substrate; forming source and drain regions inside the substrate; forming a first interlayer dielectric having a DC(Direct Contact) so that a predetermined part of the source and drain regions existing in one side of the gate are exposed; forming a bit line in a predetermined position on the first interlayer dielectric including the DC; forming a second interlayer dielectric on the first interlayer dielectric including the bit line; forming a BC(Buried Contact) by selectively etching the second interlayer dielectric, the bit line, and the first interlayer dielectric so that a predetermined part of the source and drain regions existing in the other side of the gate are exposed; forming a storage node electrode on the second interlayer dielectric including the BC; forming a dielectric layer on the surface of the storage node electrode within the temperature range from 650 to 750°C.; forming a plate electrode on the second interlayer dielectric including the dielectric layer; and furnace annealing and RTP(Rapid Thermal Process) annealing.