CAPACITOR FORMING METHOD FOR SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A capacitor forming method for semiconductor element is provided to stably perform process and to secure a yield rate. CONSTITUTION: A method for forming capacitor having a MIM(metal insulator metal) structure is comprises the steps of: a first and a second conductive layer pattern is formed by forming a first contact hole and a second contact hole, simultaneously. A capacitor having the MIM structure is formed on the first conductive layer pattern. Thereby, it is possible to reduce process by reducing a photo process for forming an upper/lower electrode of the capacitor.