FLASH NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR PREVENTING AN OVER-ERASE

摘要

PURPOSE: A flash non-volatile semiconductor memory device is provided to prevent error data caused by an over-erased memory cell without increasing a memory size. CONSTITUTION: The flash non-volatile semiconductor memory device comprises: a first lengthy diffusion area elongated along a column direction on a surface area of a semiconductor substrate; a plurality of channel regions on the surface area which elongates from one edge of the first diffusion area to a row direction, the channel regions being composed of a first channel region and a second channel region adjoining the edge of the first diffusion area; a floating gate layers on the first channel region by inserting a thin insulation layer; a gate insulation layer on the second channel regions; a control gate layer on the floating gate layers and the gate insulation layer by inserting a interlayer dielectric layer; a second diffusion area within the surface area between the adjoining second channel regions; and a conduction layer which is insulated from the control gate layers, contacts the second diffusion area and elongates along the column direction.