发明名称 ERASING AND WRITING METHOD OF SYNCHRONOUS RAM DEVICE AND SYNCHRONOUS FLASH MEMORY DEVICE SHARING SYSTEM BUS
摘要 PURPOSE: A programming and erasing method is provided for a synchronous RAM device and a synchronous flash memory device sharing system bus. CONSTITUTION: A synchronous flash memory device(100) is equipped with a synchronous dynamic random access memory device(200) having a reflash mode, an array(110) of a multiplication of memory cells sharing the system bus(12) and storing data, and a plurality of pins connected to the system bus(12) and receiving external control signals. The multiple memory cells of the synchronous flash memory device(100) comprises a multiplication of NOR-type electrically erasable and programmable ROMs. One of the electrically erasable and programmable ROM cells of the array(110) is selected by a row decoder(120) and a column decoder(130) which receive address from an input/output interface(140).
申请公布号 KR20000013842(A) 申请公布日期 2000.03.06
申请号 KR19980032937 申请日期 1998.08.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, SEONG DON;KIM, MYONG JAE
分类号 G11C11/407;G06F12/14;G11C7/10;G11C11/406;G11C16/02;(IPC1-7):G06F12/14 主分类号 G11C11/407
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