CONTACT FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact forming method of semiconductor device is provided to reduce a contact resistor between a pad poly and a buried contact. CONSTITUTION: An interlayer insulating layer is etched down to a top surface of a conductive layer pattern to form a contact hole. The conductive layer pattern is isotropically etched to increase surface area of the exposed conductive layer pattern. A contact plug is formed by filling the contact hole with a conductive material to contact with the conductive layer pattern. Thereby, it is possible to increase contact area between the conductive layer pattern and the contact plug electrically contacted with the conductive layer pattern.