SELF ALIGNED CONTACT AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A self aligned contact fabricating method is provided to prevent a short fail by a misalignment by forming a self aligned contact pad with two layers so as to be self-aligned with a gate electrode and a bit line. CONSTITUTION: In the self aligned contact fabricating method, on a first insulation layer and a first self aligned contact pad (106) formed on a semiconductor substrate (100) is formed a second insulation layer. A conductive structure is formed on the second insulation layer so as to be surrounded by a material layer having an etch selective rate with the second insulation layer. A second self aligned contact pad (118) is formed at both sides of the conductive structure so as to be connected with the first self aligned contact pad (106).