SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THEREOF

摘要

PURPOSE: A semiconductor device is provided to form a polysilicon resistor and an ESD(electro static discharge) protection element, simultaneously. CONSTITUTION: The semiconductor device is comprises a transistor consisted of a gate electrode and a source/drain region and a resistor element. A silicide layer is formed on a part of the source/drain region. A conductive layer is formed on the gate electrode and a partial region of the source/drain region does not formed the silicide layer. The conductive layer is made up a polysilicon doped an impurities.