| 摘要 |
PURPOSE: A semiconductor device is provided to prevent to a bending of wafer and increase an yield of epitaxial layer and improve a film of epitaxial layer. CONSTITUTION: The semiconductor device comprise a first reclamation layer of second conduction type, an epitaxial layer, a device separation area of first conduction type, and a second reclamation layer of second conduction type. In the semiconductor device, the first reclamation layer of second conduction type is formed on a semiconductor board of first conduction type. The epitaxial layer is formed in front of semiconductor board with a first reclamation layer. The device separation area of first conduction type is formed in the epitaxial layer. The second reclamation layer of second conduction type is faced to a bottom side of device separation area and has a width according to an adjacent area of device separation area.
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