METHOD TO REMOVE OXIDATION FILM IN SALICIDE PROCESS

摘要

PURPOSE: Method to remove oxidation film in the salicide (self aligned silicide) process is provided which can solve the problem of an increase in surface resistance caused by oxidation film on the surface of silicide in the salicide process. CONSTITUTION: Silicide is formed by RTS (Rapid Thermal Silicidation) process (S10) and strip (S12). After strip, remove the oxidation film on the silicide with dry etching (S14) or wet etching. And the problem of an increase in surface resistance caused by the remaining oxidation film can be solved.