| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to reduce leakage current by forming a dielectric film between layers. CONSTITUTION: The capacitor comprises the steps of forming a lower capacitor electrode penetrating an interlayer insulating film on formed on a semiconductor substrate to electrically be connected to the substrate, forming at least one poly-dielectric film on the lower capacitor electrode, and forming an upper capacitor electrode on the poly-dielectric film. The poly-dielectric film includes a first dielectric film, a second dielectric film, and a third dielectric film which are sequentially formed, wherein a forbidden energy band gap of the first and the third dielectric films are relatively smaller than that of the second dielectric film.
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