| 摘要 |
PURPOSE: Contact Holes are made through etching with gas containing fluoride (CF4), when CF4 and aluminum on the electrodes react, forming an aluminum fluoride layer on the surface of electrodes. This aluminum fluoride layer oxidizes electrodes, reducing process yield, reducing the reliability of a semiconductor sensor. CONSTITUTION: After electrodes are formed, evaporating a silicon oxide layer or silicon nitride layer forms a protective layer. A photosensitive layer is evaporated for patterning the protective layer. The protective layer is etched by the pattern. Thus contact holes are made. The reliability of a semiconductor sensor is improved by eliminating the aluminum fluoride layer through injection of AR gas into contact holes. The remaining photo sensitive layers are eliminated and wire bonding is processed. |
