| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma ion film forming device capable of speedily forming films without damaging samples by lowering the discharge voltage and raising the plasma density in a plasma ion film forming device to form organic synthetic films or osmium films on the surfaces of samples. SOLUTION: By making a cathode 2 a hollow cathode-type and impressing D.C. voltage between the cathode 2 and an opposing anode 3, it is possible to obtain the same discharge current by half a voltage or less in comparison with conventional parallel electrode-type diode discharge. By confining generated plasmas in the cup-shaped cathode, the plasma ion density is raised. By utilizing this, it is possible to implement a plasma ion film forming device to create an organic synthetic film or metal osmium film on the surface of a sample S placed in the hollow cathode efficiently without damaging the ions of the sample. |
