发明名称 APPARATUS AND METHOD OF HEAT-TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To suppress the generation of particles to well conduct a substrate heat treatment. SOLUTION: In a substrate heating chamber 21 a hot plate 22 for heating a substrate is provided. A shutter mechanism 30 is disposed in connection to a substrate pass hole 26 formed at the substrate heating chamber 21 and allows the operation mode to be switched over an opening/closing mode and normally opening mode. At the opening/closing mode, the substrate pass hole 26 is opened when the substrate is inserted or removed. During heat treatment of the substrate, the substrate pass hole 26 is held in a closed state. At the normally opening mode, the substrate pass hole 26 is held in a normally opened state. For a rigorous requirement for the in-plane uniformity of the substrate temp., the opening/closing mode is suited. For a less strict requirement for the in-plane uniformity of the substrate temp., the normally opening mode is adopted to suppress the generation of particles.
申请公布号 JP2000068184(A) 申请公布日期 2000.03.03
申请号 JP19980234593 申请日期 1998.08.20
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KIZAKI KOJI
分类号 G02F1/1333;H01L21/027;(IPC1-7):H01L21/027;G02F1/133 主分类号 G02F1/1333
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