| 摘要 |
PROBLEM TO BE SOLVED: To provide an semiconductor device having a vertical trench and a manufacturing method thereof. SOLUTION: The diffused layer, wherein ions are implanted, is formed on the upper surface of a semiconductor substrate 11. The vertical trench which penetrates this diffused layer and extends to the semiconductor substrate 11 is formed. The opening part of this vertical trench 32 is covered with an insulating film 19. In this semiconductor device, the opening of the upper part of the vertical trench 32 is formed in the tapered shape which expands when approaching to the input hole.
|
