| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for producing a phase-shift mask free from lowering of the quality caused by the deviation in the alignment of the photomask. SOLUTION: A light shielding film 3 having a prescribed pattern is formed on a transparent substrate 2 and a positive photoresist 7 is coated on the light shielding film 3 of the transparent substrate 2. A photomask 8 is provided at the upper part of the light shielding film 3 so that the photomask 8 covers a part of the open parts 4 of the light shielding film 3 and faces with the light shielding film 3. The pattern size of the photomask 8 is allowed to be less than the length of from one end to the other end of adjacent two light shielding patterns 3 and 3. The positive photoresist 7 is exposed to an ultra violet ray of 60% of the resolution exposure amount E th, through the photomask 8 from the upper part of the transparent substrate 2. Further, all under surface of the transparent substrate 2 is exposed to an ultra violet ray of 60% of resolution exposure amount E th, which is irradiated from lower part of the substrate 2. Afterward, the positive photoresis 7 is developed to form a pattern.</p> |
