发明名称 HARD MASK FOR SHADOW MASK AND ITS PRODUCTION
摘要 <p>PROBLEM TO BE SOLVED: To obtain a mask at a low cost which hardly produces scratches, which gives good mask pattern accuracy, which is easily formed large in size, and which gives good production yield and productivity of a shadow mask, by forming an inorg. film in a pattern on a supporting substrate and forming an electroless plating film to cover the surface of the inorg. film. SOLUTION: A metal film 14 is formed to cover plural inorg. films 12 formed in a pattern on a substrate. For example, when a metal film is formed on an inorg. film and films are patterned by etching to remove the unnecessary part, the metal film is not formed on the side faces of the inorg. film. On the other hand, by subjecting the inorg. film 12 with adsorption of an initiation catalyst to electroless plating in this method, the metal film 14 is also formed on the side faces of the inorg. film 12 and the metal film 14 is formed to cover the inorg. film 12. As for the metal film, for example, coprecipitate of Ni and element selected from P, Co and sericite can be used.</p>
申请公布号 JP2000066363(A) 申请公布日期 2000.03.03
申请号 JP19980238673 申请日期 1998.08.25
申请人 TOSHIBA CORP;MELTEX INC;ATENE KK 发明人 NAKAMURA AKIYOSHI;TAJIMA YOSHIHIRO;NIKAIDO MASARU;ISHIZUKA SHIGERU;HASHIMOTO TAKAHARU;KUDO IWAO
分类号 G03F1/00;H01J9/14;(IPC1-7):G03F1/00 主分类号 G03F1/00
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